Methods and apparatuses including a string of memory cells having a first select transistor coupled to a second select transistor

ABSTRACT

Generally discussed herein are apparatuses and methods. One such apparatus includes a data line, a first memory cell and a first select transistor. The first transistor has a gate and is coupled between the data line and the first memory cell. The apparatus can include a second memory cell and a second select transistor having a gate. The apparatus can include a third select transistor having a gate. The second select transistor is coupled between the second memory cell and the third select transistor. The third select transistor is coupled between the second select transistor and a source. The apparatus can include a drive transistor coupled to both the gate of the first select transistor and the gate of the second select transistor or the gate of the third select transistor.

PRIORITY APPLICATION

This application is a continuation of U.S. application Ser. No.16/422,209, filed May 24, 2019, which is a continuation of U.S.application Ser. No. 16/009,995, filed Jun. 15, 2018, now issued as U.S.Pat. No. 10,340,009, which is a continuation of U.S. application Ser.No. 15/443,548, filed Feb. 27, 2017, now issued as U.S. Pat. No.10,020,056, which is a continuation of U.S. application Ser. No.15/131,671, filed Apr. 18, 2016, now issued as U.S. Pat. No. 9,583,154,which is a continuation of U.S. application Ser. No. 14/456,222, filedAug. 11, 2014, now issued as U.S. Pat. No. 9,318,200, all of which areincorporated herein by reference in their entirety.

BACKGROUND

The semiconductor industry has a market driven need to reduce the sizeof devices, such as transistors, and reduce the number of devices for agiven apparatus. Some product goals include lower power consumption,higher performance, and smaller sizes. Various memory architectures havebeen proposed to decrease the power consumption in a memory device, someof which may sacrifice power consumed during a read or write operationor overall size of an apparatus for a reduced leakage current.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a circuit diagram of a prior art memory array.

FIG. 2A shows a planar view block diagram of a prior art memory, array.

FIG. 2B shows a planar view block diagram of the prior art memory arrayof FIG. 2A from the direction indicated by the lines 2B-2B in FIG. 2A.

FIG. 3A shows a block diagram of a memory array, in accord with one ormore embodiments.

FIG. 3B shows a block diagram of an example of another memory, array, inaccord with one or more embodiments.

FIG. 4A shows a planar view block diagram of a memory array, in accordwith one or more embodiments.

FIG. 4B shows a planar view block diagram of the memory array of FIG. 4Afrom the direction indicated by the lines 4B-4B in FIG. 4A, in accordwith one or more embodiments.

FIG. 4C shows a planar view block diagram of the memory array of FIG. 4Afrom the direction indicated by the lines 4B-4B in FIG. 4A, in accordwith one or more embodiments.

FIG. 5 shows a circuit diagram of a memory array, in accord with one ormore embodiments.

FIG. 6 shows another circuit diagram of another memory array, in accordwith one or more embodiments.

FIG. 7A shows a planar view block diagram of a u-shaped memory array, inaccord with one or more embodiments.

FIG. 7B shows a planar view block diagram of the memory array of FIG. 7Afrom the direction indicated by the lines 7B-7B in FIG. 7A, in accordwith one or more embodiments.

FIG. 8 shows a circuit diagram of another memory array, in accord withone or more embodiments.

FIG. 9A shows a planar view block diagram of a memory array, in accordwith one or more embodiments.

FIG. 9B shows a planar view block diagram of the memory array of FIG. 9Bfrom the direction indicated by the lines 9B-9B in FIG. 9A, in accordwith one or more embodiments.

FIG. 10 shows a circuit diagram of another memory array, in accord withone or more embodiments.

FIG. 11 shows a table of decoder logic states, in accord with one ormore embodiments.

FIG. 12 shows a flow diagram of a method of performing a read operation,in accord with one or more embodiments.

FIG. 13A shows a waveform of a read operation, in accord with one ormore embodiments.

FIG. 13B shows a waveform of another read operation, in accord with oneor more embodiments.

FIG. 14 shows a flow diagram of a method of performing a programoperation, in accord with one or more embodiments.

FIG. 15 shows a waveform of a program operation, in accord with one ormore embodiments.

DETAILED DESCRIPTION

A conventional 3D NAND memory architecture includes a string of memorycells formed along a polysilicon pillar between a first selecttransistor (e.g., a Select Gate (SG) transistor sometimes referred to asan SG Drain (SGD) transistor) and a second select transistor (e.g., anSG transistor sometimes referred to as an SG Source (SGS) transistor).The leakage current of the SGD transistor is relatively high and is notsignificantly reduced during a read operation. This leakage current canincrease with temperature. According to at least one embodimentdisclosed herein, a string that includes at least two SGS transistorscan be used to suppress such a leakage current. For example, two SGStransistors can be coupled between a source (e.g., a source plate,source node, source line, source region, source layer, etc.) and amemory cell of the string. A drive transistor coupled to one of the twoSGS transistors can be the same drive transistor that drives an SGDtransistor, so as to reduce the number of drive transistors required todrive the SG transistors of the memory array.

Note that as used herein, a gate is a part of a transistor. A CG is acontrol gate that is a part of a memory cell and an SG is a control gatethat is part of a select transistor. The memory cell can include a datastorage structure, such as a charge storage structure (e.g., a floatinggate and/or a charge trap) or variable resistance structure, forexample. Generally, a select transistor that is coupled between a sourceand a memory cell is considered an SGS transistor and a selecttransistor that is coupled between a data line and a memory cell isconsidered an SGD transistor. As used herein, both an SGS transistor andan SGD transistor are referred to as a select transistor. For memorycells including a charge storage structure, the charge stored on thecharge storage structure represents at least a portion of a bit ofstored data. The SGD transistor typically does not include a chargestorage structure, but embodiments are not limited thereto. In a doubleSGS memory architecture, one SGS transistor can include a charge storagestructure and the other SGS transistor might not include a chargestorage structures. However, both SGS transistors can include or notinclude charge storage structures.

FIG. 1 shows a circuit diagram of an example of a prior art memory array100. The array 100 includes a data line 102, a plurality of selecttransistors 104, a plurality of memory cells 106A, 106B, 106C, 106D,106E, 106F, 106G, and 106H, a plurality of select transistors 108, and asource 110.

Each of the SGD select transistors 104 is coupled between a memory cell106A and a data line 102. Each of the SGD select transistors 104 iscoupled to a respective drive transistor (not shown in FIG. 1). Thedrive transistor is typically large (on the order of about one hundredtime larger than the select transistor 104) and takes a relatively largeamount of space in a corresponding apparatus.

Each memory cell 106A-H can be coupled to other memory cells on the sametier, such as through a CG connection 112A, 112B, 1120, 112D, 112E,112F, 112G, or 112H, respectively. In FIG. 1, each memory cell 106A ison the same tier as all other memory cells 106A. Similarly, all memorycells 106B are on the same tier, and so forth.

Each of the SGS select transistors 108 is coupled to the other selecttransistors 108 on the same tier, such as through the SGS connection114. The SGS select transistors 108 are coupled between a respectivememory cell 10611 and the source 110.

In performing a read operation using a memory array such as memory array100, gates of the unselected SGD select transistors 104 are driven to areference voltage (e.g., zero volts or ground, such as V_(ss)), whilegates of a selected SGD select transistor 104 and the SGS selecttransistor 108 are driven to a higher voltage, such as V_(cc), and thesource 110 is driven to a reference voltage, such as V_(ss). In thisstate, leakage current may flow through any unselected SGD selecttransistors 104 towards the source 110. The potential on the data line102 is often used to identify the value of the data stored in the memorycell that is being read. For example, for a single level cell, a V_(cc)potential on the data line 102 might indicate that the memory cellstores a data value of “0” and a V_(ss) potential on the data line 102might indicate that the memory cell stores a data value of “1”.

FIG. 2A shows a planar view block diagram of a prior art memory array200. FIG. 2B shows a planar view block diagram of the prior art memoryarray 200 of FIG. 2A. The memory array 200 includes data lines 202A,202B, 202C, and 202D, SGD connections 204A, 204B, 204C, and 204I) (whichare sometimes referred to as “drain select lines”), CG connections 206A,206B, 206C, and 206D (which are sometimes referred to as “word lines”),SGS connections 208A, 208B, 208C, and 208D (which are sometimes referredto as “source select lines”), a source 210, and pillars 212A, 212B,212C, 212D, 212E, 212F and 212G. The memory array 200 can be similar tomemory array 100, but with separate SGS connections 208A-D (electricallyinsulated from each other), such that a separate drive transistor isrequired to drive each SGS connection 208A-D.

The memory array 200 can provide a structure that allows an SGSconnection 208A-D to control access to channels in unselected pillars212A-D and provide the ability to make the unselected channels float. Inthis manner, the unselected channels can be boosted by a capacitivecoupling between the CG connections and the floating channels, such aswhen a V_(pass_read) or V_(read) voltage is applied to the CGconnections as shown in FIG. 13A or 13B. The floating unselected channelvoltages can suppress the electric field in a tunnel oxide between therespective unselected channel and the storage structures so that theelectric field is sufficiently small. This floating voltage and smallelectric field can suppress a Fowler-Nordheim tunnel current for theunselected pillars when reading. Thus, the read disturbance forunselected memory cells of the unselected pillars can be reduced, andthe cell threshold voltages can remain relatively unchanged on reading,and the read disturbance can be reduced. However, this added flexibilityin driving the SG connections 204A-D and 208A-D individually requires adrive transistor for each, individual SG connection 204A-D and 208A-D.

The added drive transistors take up a relatively large amount of spaceand can draw more power than select transistors or memory cells. Thedrive transistors are typically driven to a potential of about twentyvolts, such as during a program operation, so the size of the drivetransistors can be relatively large when compared to a select transistorthat is typically driven to about seven or eight volts during a read orprogram operation. A memory array that operates with such additionaldrive transistors also can consume more power than a memory array thatoperates with fewer drive transistors. Thus, the leakage current andread disturbance can be reduced, but at the expense of more space andpossibly an increase in overall power consumption.

FIG. 3A shows a block diagram of an example of a memory array 300A, inaccord with one or more embodiments. FIG. 3B shows a block diagram of anexample of a memory array 300B, in accord with one or more embodiments.The memory arrays 300A and 300B each include a plurality of selecttransistors 302A, 302B, and 302C, memory cells 304, drive transistors306A and 306B, and a decoder 308.

A string of the memory arrays 300A and 300B includes a plurality ofselect transistors 302A, 302B, and 302C coupled to each other, such asthrough a plurality of memory cells 304. The select transistor 302A at afirst end of the string can be coupled to one of the memory cells 304.The select transistor 302A can also be coupled to a data line of thememory array (data line not shown in FIG. 3A or 3B). The memory array300 can include a plurality of memory cells 304 coupled in series, suchas shown in FIG. 5, 6, 8, or 10.

A select transistor 302B can be coupled between a memory cell of theplurality of memory cells 304 and the select transistor 302C. The selecttransistor 302C can be coupled between the select transistor 3029 andthe source (the source is not shown in FIG. 3A or 3B).

A drive transistor 306A can be coupled to both the select transistor302A and the select transistor 302C, such as shown in FIG. 3A.Alternatively, a drive transistor 306A can be coupled to both the selecttransistor 302A and the select transistor 302B, such as shown in FIG.39. A decoder 308 can include circuitry to determine which drivetransistors to activate to access a targeted string of a plurality ofstrings, such as in a read operation or a program operation (see FIG. 11for an example of decoder logic).

An advantage of the memory array 300A or 300B can include the ability toprogram a specific memory cell while still maintaining the flexibilityto selectively boost or precharge any of the channels of the memoryarray. This advantage can be provided without an increase in the numberof drive transistors over the number of drive transistors required todrive the memory array 200 of FIG. 2. The advantage can be provided byincluding a second select transistor 302B or 302C coupled between thesource and the memory cells 304 and coupling the select transistor 302Bor 302C to the select transistor 302A and the drive transistor 306A. Inthis way, the leakage current and read disturbance from performing theread operation, as described with regard to FIG. 1, can be reduced,while still maintaining flexibility in selecting or unselecting theselect transistors 302A-C. The leakage current or read disturbance canbe reduced by, for example, driving unselected transistors to cut-offunselected channels in a selected block of memory cells.

FIG. 4A shows a planar view block diagram of a memory array 400A, inaccord with one or more embodiments. FIG. 4B shows a planar view blockdiagram of an embodiment of the memory array 400A of FIG. 4A. FIG. 4Cshows a planar view block diagram of a memory array 400C, that is analternative embodiment of the memory array 400A of FIG. 4A, in accordwith one or more embodiments. The memory array 400A includes a pluralityof data lines 402A, 4029, 402C, and 402D, pillars 404A, 404B, 404C,404D, 404E, 404F and 404G, SGD connections 406A, 406B, 406C, and 406D,CG connections 408A, 4089, 408C, and 408D, SGS connections 410A or 410A,410B, 410C, and 410D, SGS connections 412A or 412A, 412B, 412C, and412I), and a source 414.

The embodiment of memory array 400A or 400B includes a plurality ofstrings of memory cells. Each string of the memory array 400A or 400Bincludes a select transistor coupled to a respective one of the SGDconnections 406A-D, a plurality of memory cells coupled to CGconnections 408A-D, a select transistor coupled to SGS connection 410A,and a select transistor coupled to a respective one of the SGSconnections 412A-D. The SGS connection 410A can represent a plurality ofSGS connections electrically connected to each other, such as to form anSGS plate. The strings of FIGS. 4A and 4B are arranged in a verticalstring configuration.

The embodiment of the memory array 400A or 400C includes a plurality ofstrings of memory cells. Each string of the memory array 400A or 400Cincludes a select transistor coupled to a respective one of the SGDconnections 406A-D, a plurality of memory cells coupled to CGconnections 408A-D, a select transistor coupled to a respective one ofthe SGS connections 410A-D, and a select transistor coupled to SGSconnection 412A. The SGS connection 412A can represent a plurality ofSGS connections electrically connected to each other so as to form anSGS plate. The strings of memory cells of FIG. 4C are arranged in avertical string configuration.

The data, lines 402A-D can include a conductive material, such as metalor a semiconductor (e.g., a doped semiconductor, such as conductivelydoped polysilicon). The data lines 402A-D can be coupled to pillars404A-O through SOD select transistors. The pillars 404A-G can be drivento selectively activate a particular string for reading or programming.The pillars 404A-O can include a semiconductor material, such aspolysilicon, germanium, indium, doped versions thereof, or combinationsthereof, among others.

The SGD connections 406A-D can be electrically isolated from oneanother, such as by an electric insulator (e.g., a dielectric or an airgap). The SOD connections 406A-D can include a conductive material, suchas a conductively, doped semiconductor material. The SGD connections406A-D can be separated from the pillar 404A-O by one or more dielectricmaterials, such as an oxide, to form SGD select transistors.

The CG connections 408A-D can include a conductive material, such as aconductively doped semiconductor material. The CG connections 408A-D caneach comprise a plurality of CG connections. A CG connection 408A-D canbe separated from a pillar 404A-D by one or more dielectric and/orsemiconductor materials to form a memory cell, such as one including acharge storage structure. For example, conductively doped polysiliconbetween a CG connection and the pillar (and separated from the CGconnection and the pillar by one or more dielectric materials) can storea charge thereon.

The memory array 400A or 400B includes two tiers of SGS connections 410Aand 412A-D between the CG connections 408A-D and the source 414. EachSGS connection 412A-D can be coupled to a respective SGD connection406A-D (electrical coupling not shown in FIGS. 4A and 4B).

The memory array 400A or 400C includes two tiers of SGS connections410A-D and 412A between the CG connections 408A-D and the source 414.Each SGS connection 410A-D can be coupled to a respective SGD connection406A-D (electrical coupling not shown in FIGS. 4A and 4C).

FIG. 5 shows a circuit diagram 500 of a memory array, in accord with oneor more embodiments. The circuit diagram 500 can be of the memory array400A or 400B of FIGS. 4A and 4B, with the circuit diagram 500 includingeight memory cells per string instead of four as shown in FIGS. 4A and4B. The memory array of the circuit diagram 500 includes a data line502, SGD select transistors 506A, 506B, 506C, and 506D, memory cells508A, 5089, 508C, 508D, 508E, 508F, 5080, and 508H, SGS selecttransistors 510A, 510B, 510C, and 510D, SGS select transistors 512A,5129, 512C, and 512D, and a source 514.

The SGD select transistor 506A includes a gate that can include the SODconnection 406A. The memory cell 508A includes a gate that can includethe CO connection 408A. Similarly, the SGS select transistor 510Aincludes a gate that can include the SGS connection 410A and the SGSselect transistor 512A includes a gate that can include the SGSconnection 412A. The pillar 404A-G can function as a body of the selecttransistors and the memory cells. The source 514 can include the source414. The data line 502 can include the data line 402A-D.

The memory array can include a plurality of strings of memory cells,each coupled between the data line 502 and the source 514. Each stringcan include a respective SOI) select transistor 506A-D, a plurality ofserially coupled memory cells 508A-H, a respective SGS select transistor510A-D, and a respective SGS select transistor 512A-D. The strings ofmemory cells in FIG. 5 are arranged in a vertical string configuration.

The SGD select transistor 506A-D for each string can be coupled betweena data line 502 and a memory cell 508A of the respective string. The SGSselect transistor 510A-D of each string can be coupled between a memorycell 508H of the respective string and another respective SGS selecttransistor 512A-D of the string. Each SGS select transistor 512A-D canbe coupled between a respective SGS select transistor 510A-D and asource 514.

Gates of each of the SGS select transistors 510A-D can be coupled toeach other and to a drain of a drive transistor 518B. A gate of the SGDselect transistor 506A-D of each string can be coupled to the gate of anSGS select transistor 512A-D of the same string, such as through aconnection 516A, 516B, 516C, or 516D, respectively. The gates of theselect transistors 506A-D and 512A-D, respectively, can both be coupledto a drain of a respective drive transistor 518A.

By including at least two select transistors coupled between the source514 and the memory cell 508H for each string, and by including theconnections 516A-D, the amount of leakage current during a readoperation be reduced in at least some embodiments. Also, such aconfiguration can provide the ability to selectively boost channels ofunselected strings of memory cells, such as during programmingoperations.

FIG. 6 shows a circuit diagram 600 of a memory array, in accord with oneor more embodiments. The circuit diagram 600 can be of the memory, array400A or 400C of FIGS. 4A and 4C, with the circuit diagram 600 includingeight memory cells per string instead of four as shown in FIGS. 4A and4C. The strings of memory cells depicted in FIG. 6 are arranged in avertical string configuration.

The SGD select transistor 606A includes a gate that can include the SODconnection 406A. The memory cell 608A includes a gate that can includethe CG connection 408A. Similarly, the SGS select transistor 610Aincludes a gate that can include the SGS connection 410A and the SGSselect transistor 612A includes a gate that can include the SGSconnection 412A. The pillar 404A-G can function as a body of the selecttransistors and the memory cells. The source 614 can include the source414. The data line 602 can include the data line 402A-D.

A memory array configured consistent with the circuit diagram 600 ofFIG. 6 can include an SGS select transistor 610A-D with a channel length(the length of the gate of the SGS select transistor 610A-D) that isshorter than the channel length of the SGS select transistor 510A. Thechannel length of the SGS select transistor 510A can be longer so as tohandle power required during a program operation without damaging theSGS select transistor 510A. The SGS select transistor 610A-D may notneed to be driven to the same high voltage potentials as the SGS selecttransistor 510A, and thus may include a shorter channel length, such aswithout the risk of damaging the SGS select transistor 610A-D.

FIG. 7A shows a planar view block diagram of a memory array 700, inaccord with one or more embodiments. FIG. 7B shows a planar view blockdiagram of the memory array 700 of FIG. 7A, in accord with one or moreembodiments. The memory array 700 can be similar to the memory arrays400A-C of FIGS. 4A-4C with the memory array 700 configured as a U-Shaped(e.g., a Bit-Cost Scalable (BICS)) memory array.

The memory array 700 includes data lines 702A, 702B, 702C, and 702D,pillars 704A, 704B, 704C, 704D and 704E, SGD connections 706A and 706I,CG connections 708A, 708B, 708C, 708D, 708E, 708F, 708G, 708H, 708I,708J, 708K, 708L, 708M, 708N, 708O, and 708P, SGS connections 710A and710B, SGS connections 712A and 712B, and a source 714. The memory array700 of FIG. 7B shows two strings of memory cells, each including aU-shaped pillar 704A, 704E, an SGD select transistor coupled to an SGDconnection 706A, 706B, a plurality of serially coupled memory cellscoupled to CG connections 708A-H, 708I-P, an SGS select transistorcoupled to an SGS connection 710A, 710B, and an SGS select transistorcoupled to an SGS connection 712A, 712B.

A data line 702A-E can be coupled to one or more pillars 704A-E. The CGconnections 708E-H can be coupled to the CG connections 708I-L, such asthrough a respective connection 716. The connection 716 can include aconductive material such as a metal or a semiconductor. The connection716 can include the same material as the CG connection 708A-I, such asto form two CG connections using some of the same material. Similarly,an SGD connection 706A-B can be coupled to a respective SGS connection710A-B, such as through the connection 718. The connection 718 caninclude the same material as the SG connections 706A-B or 710A-B, suchas to form two SG connections using some of the same material.Similarly, the SGS connections 712A and 712B can be coupled to eachother, such as through the connection 720. The connection 720 caninclude the same material as the SGS connection 712A or 712B, such as toform two SGS connections using some of the same material.

FIG. 8 shows a circuit diagram 800 of a memory array that includes aconfiguration similar to the memory array 700, in accord with one ormore embodiments. The circuit diagram 800 shows four strings of memorycells while the memory array 700 shown in FIG. 7B only shows two stringsof memory cells.

The SGD select transistor 806A includes a gate that can include the SODconnection 706A. The memory cell 808A includes a gate that can includethe CG connection 708A. Similarly, the SGS select transistor 810Aincludes a gate that can include the SGS connection 710A and the SGSselect transistor 812A includes a gate that can include the SGSconnection 712A. The channels 804A-G can be formed in the pillars704A-G. The source 814 can include the source 714. The data line 802A,802E can include the data line 702A, 702E, respectively.

The strings of memory cells shown in the circuit diagram 800 include anSGD select transistor 806A or 806B coupled between a data line 802A or802E, respectively, and a memory cell 808A or 808P, respectively. Aplurality of memory cells 808A-H or 808I-P can be serially coupled toone another. A pass transistor 824 can be coupled between groups ofmemory cells 808A-D and 808E-H (or groups 808I-L and 808M-P) of thestring (e.g., between memory cells 808D and 808E or 808L and 808M asshown in FIG. 8).

An SGS select transistor 810A-B is coupled between the memory cell808H-I, respectively, and another SGS select transistor 812A-B,respectively. The SGS select transistor 812A-B is coupled between theSGS select transistor 810A-B, respectively, and the source 814.

The SGD select transistor 806A-B can include a gate coupled to the gateof the SGS select transistor 810A-B, respectively, such as through aconnection 818. By including such a connection, the number of drivetransistors 828 can be reduced as compared to a memory array that doesnot include a second select transistor coupled between the source 814and a memory cell 808A or 808I.

In a P-BICS (a Piped Shaped BICS) memory architecture, such as thatshown and described in “Disturbless Flash Memory due to High BoostEfficiency on BiCS Structure and Optimal Memory Film Stack for UltraHigh Density Storage Device,” in IEDM Tech. Dig., 2008, pp. 851-854,authored by Komori et al., the number of SG drive transistors requiredis 32 (for a P-BICS with 16 strings of memory cells), 16 for the SGDselect transistors between the data line and the memory cells andanother sixteen for the SGS select transistors between the source andthe memory cells. In contrast, a memory array arranged according to thecircuit diagram 800 that includes 16 strings of memory cells can bedriven using 17 drive transistors: one per string to drive both a SGDselect transistor 806A and a SGS select transistor 810A (or both 806Band 810B) for a respective string (for a total of 16 drive transistors)and one drive transistor to drive SGS select transistors 812A-B. Thus, asignificant reduction in the number of drive transistors can be realizedusing the memory array 700 or a memory array configured according to thecircuit diagram 800.

FIG. 9A shows a planar view block diagram of a memory array 900, inaccord with one or more embodiments. FIG. 9B shows a planar view blockdiagram of the memory array 900 of FIG. 9A, in accord with one or moreembodiments. The memory array 900 can be similar to the memory array 700of FIGS. 7A and 7B with the memory array 900 including a second. SGDconnection 922A or 922B between the data line 902A or 902E and the CGconnection 908A or 908P, respectively.

The memory array 900 can include data lines 902A, 902B, 902C, 902D, and902E, pillars 904A, 904B, 904C, 904D, and 904E, SGD connections 906A and906B, CG connections 908A, 908B, 908C, 908D, 908E, 908F, 908G, 908H,908I, 908J, 908K, 908L, 908M, 908N, 908O, and 908P, SGS connections 910Aand 910B, SGS connections 912A and 912B, and a source 914. The memoryarray 900 of FIG. 9B shows two strings of memory cells. Each string caninclude a U-shaped pillar 904A-E, a first SGD select transistor coupledto a first SOD connection 922A-B, a second SGD select transistor coupledto a second SGD connection 906A-B, a plurality of memory cells coupledto CG connections 908A-P, a first SGS select transistor coupled to afirst SGS connection 910A-B, and a second. SGS select transistor coupledto a second SGS connection 912A-B.

A data line 902A-E can be coupled to one or more pillars 904A-E. Each CGconnection of a subset of CG connections 908E-H can be coupled to arespective CG connection of a corresponding subset of CG connections908I-L, such as through the connections 916. The connections 916 caninclude a conductive material such as a metal or a semiconductor. Theconnections 916 can include the same material as the CG connections908E-L, such as to form two CG connections using some of the samematerial. Similarly, the SGD connection 906A-B can be coupled to arespective SGS connection 910A-B, such as through the connection 918.The connection 918 can include the same material as the SG connection906A-B or 910A-B, such as to form two SG connections using some of thesame material. Similarly, the SGS connections 912A and 912B can becoupled to each other, such as through the connection 920. Theconnection 920 can include the same material as the SGS connection 912Aor 912B, such as to form a connection between two SGS connections usingsome of the same material.

The memory array 900 can include SOI) connections 922A-B. The SODconnections 922A-B can be between the data lines 902A and 902E and theSOD connections 906A and 906B, respectively, such as shown in FIG. 9A or9B.

FIG. 10 shows a circuit diagram 1000 of a memory array that isconfigured similar to the memory array 900, in accord with one or moreembodiments. The circuit diagram 1000 shows four strings of memorycells, while the memory array 900 depicted in FIG. 9A or 9B only showstwo strings of memory cells. A string of memory cells configured inaccord with the circuit diagram 1000 can include two SGD selecttransistors (e.g., an SGD select transistor 1006A-B and an SGD selecttransistor 1022A-B) coupled between a data line 1002A and 1002E and amemory cell 1008A and 1008P, respectively.

The SGD select transistor 1006A of a string includes a gate that caninclude the SOI) connection 906A. The memory cell 1008A of the stringinclude gates that can include the CG connection 908A. Similarly, theSGS select transistor 1010A includes a gate that can include the SGSconnection 910A and the SGS select transistor 1012A includes a gate thatcan include the SGS connection 912A. A channel 1004 can be formed in thepillar 904. The source 1014 can include the source 914. The data line1002A can include the data line 902A.

A string of memory cells in the circuit diagram 1000 can include a SGDselect transistor 1022A-B coupled between a SGD select transistor1006A-B and a data line 1002A and 1002E, respectively. The SGD selecttransistor 1006A-B can be coupled between the SGD select transistor1022A-B and a memory cell 1008A and 1008P, respectively. A plurality ofmemory cells 1008A-H and 1008I-P can be coupled in series between theSGD select transistor 1006A-B and an SGS select transistor 1010A-B,respectively. A pass transistor 1024 can be coupled between two groupsof the memory cells of a string, such as shown in FIG. 10.

The SGS select transistor 1010A-B can be coupled between a memory cell1008H-I and another SGS select transistor 1012A-B, respectively. The SGSselect transistor 1012A-B can be coupled between the SGS selecttransistor 1010A-B, respectively, and the source 1014.

The SGD select transistor 1006A-B of a string can include a gate coupledto the gate of the SGS select transistor 1010A-B of the string, such asthrough a connection 1018. The SGD select transistor 1022A-B of a stringcan include a gate coupled to a gate of the SGD select transistor1022A-B of another string, such as through a SGD connection 1026. Byincluding the SGD connection 1026 and the SGD select transistor 1022A-B,the number of SG drive transistors 1028 can be reduced as compared to amemory array that does not include a second select transistor coupledbetween the data line and the memory cell. The number of drivetransistors 1028 required to drive a memory array configured in accordwith the circuit diagram 1000 that includes sixteen strings of memorycells (two sets of eight strings of memory cells that mirror each otherand include some of the same drive transistors) can be eleven asfollows: 1) one for each SGD select transistor 1006A-B, which alsoserves as a driver for the SGS select transistor 1010A-B that is coupledto the SGD select transistor 1006A-B for a total of eight drivetransistors; 2) one drive transistor for each half of the SGD selecttransistors 1022A-B for a total of two drive transistors; and 3) onedrive transistor to drive the SGS select transistors 1012A-B of allsixteen strings of memory strings. See the discussion with regard toFIG. 8 for the number of drive transistors required for similarcircuits.

FIG. 11 shows a table 1100 of decoder logic states, in accord with oneor more embodiments. The table 1100 depicts, by way of example, how adecoder (e.g., decoder 308) can determine which drive transistors toactivate to perform an access (e.g., a read or program) operation on adesired string. According to the table 1100, to access string “1”, forexample, DT0 (drive transistor “0”) would be activated (e.g., toactivate both the select transistors 1006B and 1010B), DT2 would beactivated (e.g., to activate both the SGD select transistors 1022A and1022B), and DT4 would be activated (e.g., to activate the SGS selecttransistors 1012A-B). Accordingly, a decoder can cause a unique set ofDT states to, for example, read or program a particular memory cell orstring of memory cells.

FIG. 12 shows a flow diagram of a method 1200 of performing a readoperation using a memory array that includes at least two selecttransistors coupled between a source and a memory cell of a string(e.g., a memory array configured in accord with the circuit diagram 500,600, 800, or 1000), in accord with one or more embodiments. The method1200 as illustrated includes: at operation 1202, precharging channels ofstrings of memory cells (of a selected block of memory cells) to aprecharge voltage; at operation 1204, driving gates of selecttransistors of an unselected string of memory cells to cut-off; atoperation 1206, driving a control gate of a selected memory cell to aread voltage; and at operation 1208, determining the stored data valueof a memory cell based on a signal (e.g., a voltage or current signal)on a data line.

The operation at 1202 can include precharging (e.g., boosting) thechannels of a selected block (e.g., one or more memory cells) throughdata lines. A data line can be coupled to the memory cells of arespective string by activating a corresponding SGD selecttransistor(s). The operation at 1204 can include driving control gatesof a plurality of select transistors of an unselected string of memorycells to a reference voltage (e.g., V_(ss)) to inactivate the unselectedselect transistors, thereby cutting off the channel of the unselectedstring of memory cells.

The method 1200 can also include driving control gates of unselectedmemory cells of a string to a read_pass voltage greater than the readvoltage. The method 1200 can further include driving a source to thereference voltage. Also, the method 1200 can include driving gates ofthe select transistors of a selected string(s) to a voltage sufficientto activate the select transistors (e.g., V_(cc)) of the selected stringin response to (e.g., after or shortly after, such as on the order ofnanoseconds) the control gate of the selected memory cell being drivento the read voltage.

FIG. 13A shows a wave diagram of a read operation 1300A using a memoryarray, such as the memory array 300A, 300B, the memory array 400A-C,700, or 900, or a memory array configured in accordance with the circuitdiagram 500, 600, 800, or 1000, in accord with one or more embodiments.While FIG. 13A illustrates reference numbers of FIG. 7, it will beunderstood that the waveforms illustrated show a general read waveformfor a selected block of memory cells having strings that include atleast two select transistors coupled between the source and a memorycell. The waveform of FIG. 13A can depict some aspects of the method1200.

Pillars of a selected block can be driven from corresponding data linesso as to precharge the channels of the memory cells of the selectedblock. The channels of unselected strings of the block can be driven tofloat, such as by driving the control gate of the SGD select transistor(e.g., 706B) and the commonly coupled control gate of one of the SGSselect transistor (e.g., 710B) of each unselected string to a referencevoltage (e.g., V_(ss) or other reference voltage), so that the channelsof the unselected strings can be cut-off during data line sensing.According to at least one of the disclosed embodiments, as a result, theleakage current through the SGD select transistors of the unselectedstrings can be at least partially suppressed. The channels of theunselected strings can be boosted by the CGs of the selected block, suchas when they are driven to a pass_read and/or read voltage (e.g., aV_(pass_read) or V_(read), such as shown in FIG. 13A). An advantage ofperforming such an operation, in accord with at least one of thedisclosed embodiments, can include reduced read disturbance.

FIG. 13B shows a wave diagram of another read operation 1300B using amemory array, such as the memory array 300A, 300B, the memory array400A-C, 700, or 900, or a memory array configured in accord with thecircuit diagram 500, 600, 800, or 1000, in accord with one or moreembodiments. While FIG. 13B illustrates reference numbers of FIG. 7, itwill be understood that the waveforms illustrated show a general readwaveform for a selected block of memory cells including strings havingtwo select transistors coupled between the source and a memory cell. Thewaveform of FIG. 13B can depict some aspects of the method 1200.

Pillars of a selected block can be driven from the data lines of theselected block so as to precharge the channels of memory cells of theselected block. The channels of unselected strings of the block can bedriven to float, such as by applying a reference voltage (e.g. V_(ss))to the control gates of SGD and SGS select transistors of the unselectedstrings, so that the channels of the unselected strings can be cut-offduring data line sensing. According to at least one of the disclosedembodiments, as a result, the leakage current through the unselected SGDselect transistors can be suppressed. The unselected pillar channels canbe boosted by the CGs, such as through application of a voltage to suchCGs (e.g., V_(pass_read) or V_(read), such as shown in FIG. 13B). Anadvantage of performing such an operation, in accord with at least oneof the disclosed embodiments, can include reduced read disturbance.

Some differences between the wave diagram 1300A and the wave diagram1300B include not temporarily reducing the voltages on the CGs of thememory cells and selected SGD select transistors after driving thosegates to a voltage higher than V_(ss) (e.g., V_(cc)). For example, asshown in FIG. 13B, the CGs of the memory cells of the selected block aredriven to V_(pass_read) instead of V_(cc), after which the voltage onthe CG of the selected memory cell is reduced to V_(read). Also, thevoltage on the gate of the SGD select transistor(s) of the selectedstring is maintained at V_(cc) instead of temporarily reducing it toV_(ss). An advantage of performing an embodiment such as that discussedwith respect to FIG. 13B may be realized in circumstances where thethreshold voltage of the cell selected to be read is higher than V_(cc)(where performing an embodiment such as that discussed with respect toFIG. 13A may lead to the channel of the selected cell not beingsufficiently precharged).

FIG. 14 shows a flow diagram of a method 1400 of performing a programoperation on a selected block of memory array that includes stringshaving at least two select transistors coupled between a source and amemory cell (e.g., memory array 300A or 300B or memory array 400A-C,700, or 900 or a memory array configured in accordance with the circuitdiagram 500, 600, 800, or 1000), in accord with one or more embodiments.The method 1400 as illustrated includes: at operation 1402, selectivelyprecharging channels of memory cells to a voltage selected from thegroup comprising at least one of a program enable voltage (e.g., V_(ss)or ground) and a program inhibit voltage (e.g., V_(cc)) or other voltageintermediate to the program inhibit voltage and the program enablevoltage, such as a Selective Slow Programming Convergence (SSPC)voltage; at operation 1404, driving gates of a plurality of selecttransistors of an unselected string of memory cells with a single drivetransistor to cut-off the channel of the unselected string of memorycells; and, at operation 1406, driving a gate of a selected memory cellof a selected string of memory cells to a program voltage to program theselected memory cell.

SSPC can account for preexisting charges present on a given connection.SSPC can be used when programming a memory cell or block of memorycells. Using SSPC, a memory cell is programmed with incrementallyincreased programming pulses applied to CG connections to which thememory cell is coupled. After each pulse, a verify operation can helpdetermine the threshold voltage for the cell. When the threshold voltagereaches a pre-verify threshold, the data connected to that particularcell can be biased with an intermediate voltage that slows down thechange in the threshold voltage of the cell. Other memory cells cancontinue to be programmed at their normal pace. As the threshold voltagefor each cell reaches the pre-verify level, it is biased with theintermediate voltage. The data lines can be biased with an inhibitvoltage as the cell threshold voltage reaches the verify voltagethreshold.

The operation at 1402 can include precharging the channels through datalines. The data lines can be coupled to the channels of a block ofmemory cells by activation of the SGD select transistors. The programvoltage (e.g., V_(program)) can be greater than both the program enableand program inhibit voltages.

The method 1400 can also include driving CGs of unselected memory cellsof the strings to a pass_program voltage less than the program voltage.The method 1400 can further include driving a source from a firstreference voltage (e.g., V_(ss)) to a second reference voltage (e.g.,V_(cc)) prior to driving the control gates of the memory cells to thepass_program voltage.

FIG. 15 shows a wave diagram of a program operation 1500 using a memoryarray, such as the memory array 300A, 300B, the memory array 400, 700,or 900, or a memory array configured in accord with the circuit diagram500, 600, 800, or 1000, in accord with one or more embodiments. WhileFIG. 15 illustrates reference numbers of FIG. 7, it will be understoodthat the waveforms illustrated show a general program waveform for aselected block of a memory array including two select transistorscoupled between the source and a memory cell. The channels of theselected block can be driven from the data lines so as to selectivelyprecharge channels of memory cells of the selected block. SGD and SGSselect transistors of the unselected strings can then be cut-off toallow the channels of the unselected strings of memory cells to floatduring programming. The waveform of FIG. 15 can depict some aspects ofthe method 1400.

An advantage of using a string of memory cells as discussed herein caninclude not increasing the number of drive transistors required to driveselect transistors of the string of memory cells while maintaining orincreasing channel selectivity. The leakage current through unselectedchannels can be reduced so that a number of faulty read operations canbe reduced. For example, the read disturbance or the leakage current canbe reduced. An advantage can include a read power reduction, such as inembodiments where the unselected channels can be floating. Similarly, atime to perform a read or program operation can be reduced, such as inembodiments where unselected channels can be floating.

While the above description and drawings illustrate some embodiments ofstrings of memory cells using n-type logic, it will be understood thatp-type logic could be used in creating such strings of memory cells.Also, while the above description and drawings illustrate some stringsof memory cells with certain numbers of memory cells, it will beunderstood that more or fewer memory cells can be included in a stringof memory cells. Typically, the number of memory cells in a string is apower of two, such as two, four, eight, sixteen, thirty-two, sixty-four,etc., but different numbers of memory cells can be included in a string.The number of strings of memory cells in a block of memory can likewisebe increased or decreased. An apparatus or device, as described herein,can refer to any of a system, device, die, circuit, or the like.

The above description and the drawings illustrate some embodiments toenable those skilled in the art to practice the embodiments of theinvention. Other embodiments may incorporate structural, logical,electrical, process, and other changes. Examples merely typify possiblevariations. Portions and features of some embodiments may be includedin, or substituted for, those of other embodiments. Many otherembodiments will be apparent to those of skill in the art upon readingand understanding the above description.

What is claimed is:
 1. A method of performing a memory operation on amemory array, comprising: precharging channels of a group of multiplestrings of memory cells of the memory array to a precharge voltage,wherein the memory cell strings include at least first and second selecttransistors located at opposite sides of the memory cells of the string,and wherein a selected string of the group of multiple strings includesa selected memory cell upon which the memory operation will beperformed; after precharging channels of the group of multiple stringsof memory cells, isolating the precharged channels of multipleunselected memory cell strings including controlling gates of the firstand second select transistors of an unselected memory cell stringthrough use of a single drive transistor; driving a third select gate inthe selected memory cell string with a first voltage to turn on thethird select gate; and driving a control gate of the selected memorycell of the selected string of memory cells to a second voltage, toperform the operation on the selected memory cell.
 2. The method ofclaim 1, wherein the multiple strings of memory cells include respectivefirst, second, and third select transistors, wherein the first selecttransistor is a select gate drain (SGD) transistor.
 3. The method ofclaim 2, wherein the second and third select transistors of the memorycell strings are first and second series-connected source gate select(SGS) transistors wherein the first SGS transistor is placed between thememory cells of the string and the second SGS transistor, and whereinthe second SGS transistor extends between the first SGS transistor andthe source, and wherein the SGD transistor and one of the first andsecond SGS transistors of a string are controlled by the single drivetransistor.
 4. The method of claim 3, wherein the single drivetransistor is coupled to control in common the SGD transistor and thesecond SGS transistor.
 5. The method of claim 3, wherein the singledrive transistor is coupled to control in common the SGD transistor inthe first SGS transistor.
 6. The method of claim 3, wherein one of thefirst SGS transistor and the second SGS transistor has a channel lengthgreater than the other SGS transistor.
 7. The method of claim 3, whereindriving the gate of the selected memory cell comprises driving thecontrol gate to an elevated pass voltage during the precharging ofchannels of the group of multiple strings, and reducing the pass voltageto a read voltage after the precharging to read the selected memorycell.
 8. The method of claim 7, further comprises, after pre-chargingchannels of the group of memory cell strings, maintaining the voltageapplied to the SGD transistor and one of the first and second SGStransistors of the selected memory cell string through use of the singledrive transistor coupled to both the SGD and SGS transistor.
 9. Themethod of claim 8, wherein the operations performed on the selectedmemory cell is a read operation, and further comprising applying avoltage to turn on the SGS transistor of the selected string of memorycells during the read operation.
 10. A memory structure, comprising:multiple memory cell strings, comprising; multiple memory cellsconnected in series, a select gate drain (SGD) transistor coupled inseries with the multiple memory cells on a first side of the multiplememory cells; a first select gate source (SGS) transistor coupled inseries with the first and memory cells on a second side of the multiplememory cells; and a second SGS transistor coupled in series with thefirst SGS transistor; and a first drive transistor coupled to control inparallel both the SGD transistor and one of the first SGS transistor orthe second SGS transistor.
 11. The memory structure of claim 10, furthercomprising a data line coupled to the select gate drain transistor. 12.The memory structure of claim 10, wherein the first SGS transistor issituated between the second SGS transistor and the multiple memorycells.
 13. The memory structure of claim 12, wherein the first drivetransistor is coupled to both the SGD transistor and the first SGStransistor; and further comprising a second drive transistor coupled toa gate of the second SGS transistor.
 14. The memory structure of claim12, wherein the first drive transistor is coupled to both the SGDtransistor and the second SGS transistor; and further comprising asecond drive transistor coupled to a gate of the first SGS transistor.15. The memory structure of claim 10, wherein the first and second SGStransistors are operable independently from one another.
 16. Anapparatus comprising: multiple memory cells, each memory cell includinga control gate; a semiconductor pillar extending adjacent multiplememory cells of a memory cell string; a select gate drain (SGD)transistor between the multiple memory cells of the memory cell stringand a bit line; a first select gate source (SGS) transistor on anopposite side of the multiple memory cells from the SGD transistor inthe memory cell string, and between the multiple memory cells and asource; a second select gate source (SGS) transistor coupled in serieswith the first SGS transistor, and between the first SGS transistor andthe source; and a first drive transistor coupled to control in parallelboth, the SGD transistor; and one of the first SGS transistor and thesecond SGS transistor.
 17. The apparatus of claim 16, further comprisinga second drive transistor coupled to control the one of the first orsecond SGS transistor that is not controlled by the first drivetransistor.
 18. The apparatus of claim 17, wherein the memory cellstring extends vertically between the source and the bit line, andwherein a semiconductor pillar extends vertically and adjacentvertically offset memory cells of the memory cell string.
 19. Theapparatus of claim 18 wherein the source extends beneath the firstmemory cell string; and wherein the bit line extends above the memorycell string.
 20. The apparatus of claim 17, wherein the pillar isU-shaped, and wherein the source extends above a first leg of theU-shape, and wherein the bit line extends above a second leg of theU-shape; wherein the first SGS transistor and the second SGS transistorextend between the source and a first group of the multiple memory cellsadjacent the first leg of the U-shape; and wherein the SGD transistorextends between the bit line and a second group of the multiple memorycells adjacent the second leg of the U-shape.